Electroless Atomic Layer Deposition of Pt on Cu Nanowires
| dc.contributor.author | Solanki, Dhaivat J. | |
| dc.contributor.author | Brankovic, Stanko R. | |
| dc.date.accessioned | 2018-02-23T19:36:23Z | |
| dc.date.available | 2018-02-23T19:36:23Z | |
| dc.date.issued | 2017 | |
| dc.description.abstract | Pt is a material widely used as a catalyst in many areas of chemical synthesis and energy conversion and as a protective layer and etch stop barrier in the semiconductor industry. Due to high surface free energy, Pt exhibits a rough 3D growth (Volmer – Weber) mode. This represents a challenge when ultrathin and conformal layers of Pt are needed. The electroless ALD process presented here enables uniform and selective deposition of Pt on micro patterned Cu structures/wires on Si and SiO2, offering an opportunity for simplified integration into more complex fabrication routes currently used in semiconductor fabs. Outline of the process: Pt is deposited on Cu lines by surface limited redox replacement (SLRR). Monolayer of Pb is deposited on Cu/Pt using an ‘electro-less’ approach utilizing V2/3+ redox couple. Pb monolayer on Cu/Pt serves as a reducing agent for Pt deposition (self-limited to 1 ML). | |
| dc.description.department | Electrical and Computer Engineering, Department of | |
| dc.identifier.uri | http://hdl.handle.net/10657/2334 | |
| dc.language.iso | en_US | |
| dc.title | Electroless Atomic Layer Deposition of Pt on Cu Nanowires | |
| dc.type | Poster |