EPITAXIAL GROWTH OF THIN FILMS BY PHYSICAL VAPOR DEPOSITION

Physical vapor deposition (PVD), including magnetron sputtering deposition and ion beam assisted deposition (IBAD) have been used for epitaxial growth of single-crystal-like, biaxially-textured thin films on various substrates with good texture. These thin films are used for the fabrication of semiconductor/superconductor devices on flexible metal substrates for good electrical properties, or as coatings on cutting tools for high hardness and abrasion resistance. In this dissertation, epitaxial TiN(200) thin film has been demonstrated on flexible metal substrates, and on tungsten carbide cobalt tool bits. Additionally, TiN(111) epitaxial growth has been shown on these substrates. High dielectric constant inorganic perovskite materials, such as strontium titanate (SiTrO3) have been epitaxially grown on flexible metal substrates with TiN(200) and LaMnO3(200) intermediate layers. Different structures of electrically-conductive oxide buffers have been studied for epitaxial growth of the rare-earth barium copper oxide superconductor thin film. Epitaxial growth of ultra-high bandgap material, gallium oxide (Ga2O3) has been demonstrated with good quality texture on MgO(200)-based flexible metal substrate by magnetron sputtering. Additionally, epitaxial Si-doped Ga2O3 thin films with better texture quality have been shown on flexible metal substrates.