Thermodynamics of Boron Arsenide Crystal Growth and Characterizations

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dc.contributor.advisorRen, Zhifeng
dc.contributor.committeeMemberLiu, Dong
dc.contributor.committeeMemberChen, Shuo
dc.contributor.committeeMemberBao, Jiming
dc.contributor.committeeMemberRuchhoeft, Paul
dc.creatorZiyaee, Hamid Reza
dc.creator.orcid0000-0002-2262-4127
dc.date.accessioned2019-12-17T00:35:50Z
dc.date.createdDecember 2019
dc.date.issued2019-12
dc.date.submittedDecember 2019
dc.date.updated2019-12-17T00:35:51Z
dc.description.abstractDiamond has been known as the best material for conducting heat for decades, but it is scarce, and the synthetic production of diamond is very expensive, slow growth rates, and low quality and has a different thermal expansion rate when it is paired with a semiconductor device. Recently, cubic Boron Arsenide (c-BAs) has represented a new class of high thermal conductivity by both calculations and experimental efforts. Calculation shows the ultrahigh thermal conductivity value of 1400 W m-1 K-1 in BAs at room temperature which is the highest thermal conductivity among semiconductor materials. In this work, BAs single crystal growth with the optimization of chemical vapor transport (CVT) method has been studied and the grown crystals has shown the thermal conductivity value up to 1300 W m-1 K-1. The average lattice constant and density of BAs single crystal was also measured as 4.79 ± 0.01 Å and 5.182 (g cm-3), respectively. Moreover, the reported high thermal conductivity of boron arsenide (BAs) has prompted scientists to characterize the various properties of this material. Thermodynamic data for the enthalpy (H), entropy (S), and Gibbs free energy (G) of BAs were previously predicted from theory. Here, its thermodynamic properties were determined from experimental measurements of its heat capacity (Cp) over the temperature range of 298 to 1200 K and compared with the predicted data. The thermodynamic properties of BAs at 800 K were calculated to be H =-8.6 kJ mol-1, S =81.0 J mol-1 K-1, and G =-73.4 kJ mol-1, and we found that its formation reaction becomes endothermic at 984 K. We also analyzed the experimental findings from growing BAs single crystals (SCs) by the chemical vapor transport (CVT) method. Thermodynamic concepts were applied to show that iodine is the most suitable transport agent among the halogens for obtaining BAs SCs by CVT. Additionally, three different combinations of precursors were employed during BAs SC growth by CVT. The three approaches are described in terms of differences in partial pressure of gaseous species, and their results are compared for possible optimization of the BAs SC growth process by CVT.
dc.description.departmentMechanical Engineering, Department of
dc.format.digitalOriginborn digital
dc.format.mimetypeapplication/pdf
dc.identifier.citationPortions of this document appear in: Ziyaee, Hamidreza, Geethal Amila Gamage, Haoran Sun, Fei Tian, and Zhifeng Ren. "Thermodynamic calculation and its experimental correlation with the growth process of boron arsenide single crystals." Journal of Applied Physics 126, no. 15 (2019): 155108.
dc.identifier.urihttps://hdl.handle.net/10657/5522
dc.language.isoeng
dc.rightsThe author of this work is the copyright owner. UH Libraries and the Texas Digital Library have their permission to store and provide access to this work. UH Libraries has secured permission to reproduce any and all previously published materials contained in the work. Further transmission, reproduction, or presentation of this work is prohibited except with permission of the author(s).
dc.subjectBoron Arsenide
dc.subjectBAs
dc.subjectCVT
dc.subjectThermodynamics
dc.subjectHigh thermal conductivity
dc.subjectSemiconductors
dc.titleThermodynamics of Boron Arsenide Crystal Growth and Characterizations
dc.type.dcmiText
dc.type.genreThesis
local.embargo.lift2021-12-01
local.embargo.terms2021-12-01
thesis.degree.collegeCullen College of Engineering
thesis.degree.departmentMechanical Engineering, Department of
thesis.degree.disciplineMechanical Engineering
thesis.degree.grantorUniversity of Houston
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy

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