EPITAXIAL GROWTH AND REAL-TIME ELECTRON DIFFRACTION ANALYSIS OF ADVANCED III-V SEMICONDUCTOR-BASED QUANTUM DOTS

Gunasekera, Manori Vajira Chintha 1981-

EPITAXIAL GROWTH AND REAL-TIME ELECTRON DIFFRACTION ANALYSIS OF ADVANCED III-V SEMICONDUCTOR-BASED QUANTUM DOTS

dc.contributor.advisor	Freundlich, Alex
dc.contributor.committeeMember	Chu, Wei-Kan
dc.contributor.committeeMember	Stokes, Donna W.
dc.contributor.committeeMember	Wood, Lowell T.
dc.contributor.committeeMember	Zagozdzon-Wosik, Wanda
dc.creator	Gunasekera, Manori Vajira Chintha 1981-
dc.creator.orcid	0000-0002-5682-9526
dc.date.accessioned	2017-06-14T21:26:21Z
dc.date.available	2017-06-14T21:26:21Z
dc.date.created	May 2015
dc.date.issued	2015-05
dc.date.submitted	May 2015
dc.date.updated	2017-06-14T21:26:22Z
dc.description.abstract	The impact of growth kinetics on structural properties significantly affects optical and electronic performances of self-assembled Stranski-Krastanov (SK) quantum dots. Here and within the framework of the synthesis of archetype InAs/GaAs quantum dot system we have undertaken a systematic study on the evolution of dot facet orientation in terms diffraction characterization by the reflection high-energy electron diffraction (RHEED) technique. The existence of a sharp transition of facet arrangements and shapes near the onset of dot formation is investigated, and a dot structure bound by {2 5 11} facets is proposed. During further calculations, we observed asymmetric ripening of quantum dot facets at initial growth stages, and as the dot ripens, more symmetric facet arrangement to the incident direction was noted. Further, incorporating the correlation between dot structural properties and RHEED intensity features, we propose structures for quantum dots bounded by {1 3 6} and {1 (3 ) ̅5} facets for both asymmetric and symmetric situations. In addition, development of advanced quantum dot structures to fabricate wetting layer separated InAs quantum dots is implemented. Improvement of photoluminescence emission from InAs quantum dots embedded in a GaAs matrix is presented at the end of the work.
dc.description.department	Physics, Department of
dc.format.digitalOrigin	born digital
dc.format.mimetype	application/pdf
dc.identifier.uri	http://hdl.handle.net/10657/1775
dc.language.iso	eng
dc.rights	The author of this work is the copyright owner. UH Libraries and the Texas Digital Library have their permission to store and provide access to this work. Further transmission, reproduction, or presentation of this work is prohibited except with permission of the author(s).
dc.subject	Quantum dots
dc.subject	Semiconductors
dc.title	EPITAXIAL GROWTH AND REAL-TIME ELECTRON DIFFRACTION ANALYSIS OF ADVANCED III-V SEMICONDUCTOR-BASED QUANTUM DOTS
dc.type.dcmi	text
dc.type.genre	Thesis
thesis.degree.college	College of Natural Sciences and Mathematics
thesis.degree.department	Physics, Department of
thesis.degree.discipline	Physics
thesis.degree.grantor	University of Houston
thesis.degree.level	Doctoral
thesis.degree.name	Doctor of Philosophy