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dc.contributor.advisorDonnelly, Vincent M.
dc.contributor.advisorEconomou, Demetre J.
dc.creatorKaler, Sanbir S
dc.date.accessioned2016-08-21T01:48:02Z
dc.date.available2016-08-21T01:48:02Z
dc.date.createdAugust 2014
dc.date.issued2014-08
dc.identifier.urihttp://hdl.handle.net/10657/1451
dc.description.abstractIn advanced microelectronic device fabrications, novel gate electrode designs for field effect transistors (FinFETs) require highly anisotropic and selective silicon nitride (SiNx) etching over Si and/or SiO2. SiNx substrates and p-Si on Ge substrates were etched with CH3F/O2 and CH3F/CO2 inductively coupled plasma beams. In addition, polymer films deposited on p-Si and SiNx were characterized and compared via x-ray photoelectron spectroscopy analyses. Optical emission species intensity and species number density of the hydro-fluorocarbon plasma, as a function of % O2 and CO2 addition were compared. Etch and deposition rates were measured on either side of abrupt transitions in gas-phase species concentration, detected at ~ 48 % O2 and ~ 74% CO2. These transition point compositions correspond to a switch from polymer-coated to polymer-free reactor walls.
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.subjectSilicon-nitride etching
dc.subjectHydro-fluorocarbon plasmas
dc.titleEtching of Si and SiNx by Beams Emanating from Inductively Coupled CH3F/O2 and CH3F/CO2 Plasmas
dc.date.updated2016-08-21T01:48:02Z
dc.type.genreThesis
thesis.degree.nameMaster of Science
thesis.degree.levelMasters
thesis.degree.disciplineChemical Engineering
thesis.degree.grantorUniversity of Houston
thesis.degree.departmentChemical and Biomolecular Engineering
dc.contributor.committeeMemberStein, Gila E.
dc.contributor.committeeMemberRuchhoeft, Paul
dc.type.dcmiText
dc.format.digitalOriginborn digital
dc.description.departmentChemical and Biomolecular Engineering
thesis.degree.collegeCullen College of Engineering


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