Donnelly, Vincent M.Economou, Demetre J.2016-08-212016-08-21August 2012014-08http://hdl.handle.net/10657/1451In advanced microelectronic device fabrications, novel gate electrode designs for field effect transistors (FinFETs) require highly anisotropic and selective silicon nitride (SiNx) etching over Si and/or SiO2. SiNx substrates and p-Si on Ge substrates were etched with CH3F/O2 and CH3F/CO2 inductively coupled plasma beams. In addition, polymer films deposited on p-Si and SiNx were characterized and compared via x-ray photoelectron spectroscopy analyses. Optical emission species intensity and species number density of the hydro-fluorocarbon plasma, as a function of % O2 and CO2 addition were compared. Etch and deposition rates were measured on either side of abrupt transitions in gas-phase species concentration, detected at ~ 48 % O2 and ~ 74% CO2. These transition point compositions correspond to a switch from polymer-coated to polymer-free reactor walls.application/pdfengThe author of this work is the copyright owner. UH Libraries and the Texas Digital Library have their permission to store and provide access to this work. Further transmission, reproduction, or presentation of this work is prohibited except with permission of the author(s).Silicon-nitride etchingHydro-fluorocarbon plasmas2016-08-21Thesisborn digital