Switching characteristics of field effect transistors

The operating characteristics of junction field-effect transistors and insulated-gate field-effect transistors are presented. From these characteristics which are available in the current literature, original expressions are derived that correlate the rise time, fall time, and delay times for the devices with the intrinsic parameters of the devices. As a typical application of field-effect transistors in digital circuits, the design procedure for an astable multivibrator is presented. Values obtained from these expressions are compared with experimental data. The comparisons between the measured and calculated switching times verify the accuracy of the expressions that were derived.